FQP9N15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Transistor Application :

SWITCHING

Power Dissipation-Max :

75W Tc

Drain Current-Max (Abs) (ID) :

9A

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Qualification Status :

COMMERCIAL

Vgs (Max) :

±25V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

150V

Terminal Position :

Single

JESD-609 Code :

e3

Number of Terminations :

3

DS Breakdown Voltage-Min :

150V

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

36A

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Avalanche Energy Rating (Eas) :

80 mJ

Terminal Finish :

MATTE TIN

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

Not Applicable

Package / Case :

TO-220-3

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.4Ohm