FQP9N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Drain Current-Max (Abs) (ID) :

9A

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

27 ns

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Power Dissipation :

98W

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Terminations :

3

Pbfree Code :

yes

JESD-609 Code :

e3

Voltage - Rated DC :

300V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Weight :

1.8g

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

9A

Mount :

Through Hole

Transistor Element Material :

SILICON

Fall Time (Typ) :

48 ns

Number of Pins :

3

Power Dissipation-Max :

98W Tc

Package / Case :

TO-220-3

Current Rating :

9A

Turn On Delay Time :

16 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Number of Elements :

1

FET Type :

N-Channel

Lead Free :

Lead Free

Rise Time :

120ns

Published :

2013

Drain to Source Breakdown Voltage :

300V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Rds On (Max) @ Id, Vgs :

450m Ω @ 4.5A, 10V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.45Ohm

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

420 mJ

Series :

QFET®

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

9 Weeks