FQP9N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

JESD-609 Code :

e3

Terminal Finish :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

210m Ω @ 4.65A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

80V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

55 mJ

Packaging :

Tube

Pin Count :

3

Transistor Element Material :

SILICON

Series :

QFET®

Number of Elements :

1

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

9.3A

Drain-source On Resistance-Max :

0.21Ohm

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

37.2A

Qualification Status :

COMMERCIAL

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

40W Tc

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 10V

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

80V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA