FQP6P25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

250V

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Power Dissipation-Max :

90W Tc

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3A, 10V

Pin Count :

3

Packaging :

Tube

FET Type :

P-Channel

Package / Case :

TO-220-3

JESD-609 Code :

e3

Terminal Position :

Single

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Avalanche Energy Rating (Eas) :

540 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Drain to Source Voltage (Vdss) :

250V

Mounting Type :

Through Hole

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

24A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

6A

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V