FQP6P25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

540 mJ

Pin Count :

3

Packaging :

Tube

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

6A

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

250V

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

250V

FET Type :

P-Channel

Pbfree Code :

yes

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Number of Elements :

1

Power Dissipation-Max :

90W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Series :

QFET®

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3A, 10V

Peak Reflow Temperature (Cel) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

24A

Terminal Finish :

MATTE TIN

Number of Terminations :

3