FQP6N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

22A

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

45ns

Voltage - Rated DC :

600V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

2 Ω @ 2.75A, 10V

Lead Free :

Lead Free

Number of Elements :

1

Weight :

1.8g

Power Dissipation :

125W

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

2Ohm

Turn-Off Delay Time :

45 ns

Element Configuration :

Single

Current Rating :

5.5A

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

6 Weeks

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

300 mJ

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Additional Feature :

FAST SWITCHING

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Power Dissipation-Max :

125W Tc

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

5.5A

Drain to Source Breakdown Voltage :

600V