FQP630

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Drain to Source Voltage (Vdss) :

200 V

Technology :

MOSFET (Metal Oxide)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

400mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

Mounting Type :

Through Hole

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

Supplier Device Package :

TO-220-3

Vgs (Max) :

±25V

Power Dissipation (Max) :

78W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

550 pF @ 25 V