FQP65N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Finish :

Tin (Sn)

Published :

2001

Gate to Source Voltage (Vgs) :

25V

Weight :

1.8g

ECCN Code :

EAR99

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 25V

Number of Terminations :

3

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

16m Ω @ 32.5A, 10V

Factory Lead Time :

5 Weeks

Resistance :

16mOhm

Mounting Type :

Through Hole

Length :

10.1mm

FET Type :

N-Channel

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Power Dissipation :

150W

Height :

9.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

4.7mm

Power Dissipation-Max :

150W Tc

Current Rating :

65A

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

65A

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Drain to Source Breakdown Voltage :

60V

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

650 mJ

Vgs (Max) :

±25V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Turn On Delay Time :

20 ns

Number of Pins :

3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Turn-Off Delay Time :

90 ns

Rise Time :

160ns

Dual Supply Voltage :

60V

Pulsed Drain Current-Max (IDM) :

260A

JESD-609 Code :

e3

Fall Time (Typ) :

105 ns

Voltage - Rated DC :

60V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ