FQP6N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

300 mJ

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Terminations :

3

HTS Code :

8541.29.00.95

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

130W Tc

Transistor Application :

SWITCHING

Packaging :

Tube

JESD-609 Code :

e3

Additional Feature :

FAST SWITCHING

Drain-source On Resistance-Max :

2Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±30V

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

22A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Published :

2000

Series :

QFET®

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

5.5A

Vgs(th) (Max) @ Id :

5V @ 250μA