FQP6N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Qualification Status :

COMMERCIAL

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

1Ohm

Drain to Source Voltage (Vdss) :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Series :

QFET®

Mounting Type :

Through Hole

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

22A

Power Dissipation-Max :

63W Tc

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Number of Elements :

1

Reach Compliance Code :

Unknown

Packaging :

Tube

Peak Reflow Temperature (Cel) :

Not Applicable

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

75 mJ

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

DS Breakdown Voltage-Min :

250V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.75A, 10V

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

5.5A

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc