FQP6N40CF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Rise Time :

65ns

Pulsed Drain Current-Max (IDM) :

24A

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Pbfree Code :

yes

Series :

FRFET®

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3A, 10V

Power Dissipation :

73W

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

11 Weeks

Continuous Drain Current (ID) :

6A

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

6A

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSFM-T3

Drain to Source Breakdown Voltage :

400V

Packaging :

Tube

Turn-Off Delay Time :

21 ns

Number of Terminations :

3

Weight :

1.8g

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

38 ns

Power Dissipation-Max :

73W Tc

Avalanche Energy Rating (Eas) :

270 mJ

ECCN Code :

EAR99

Turn On Delay Time :

13 ns