FQP6N40C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

73W Tc

Continuous Drain Current (ID) :

6A

Rds On (Max) @ Id, Vgs :

1 Ω @ 3A, 10V

Number of Terminations :

3

Pbfree Code :

yes

Turn-Off Delay Time :

21 ns

JESD-609 Code :

e3

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Published :

2003

FET Type :

N-Channel

Vgs (Max) :

±30V

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Weight :

1.8g

Contact Plating :

Tin

Avalanche Energy Rating (Eas) :

270 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

400V

Package / Case :

TO-220-3

Number of Pins :

3

Transistor Element Material :

SILICON

Length :

10.1mm

Current Rating :

6A

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

1Ohm

Factory Lead Time :

4 Weeks

Turn On Delay Time :

13 ns

Series :

QFET®

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drain to Source Breakdown Voltage :

400V

Qualification Status :

Not Qualified

Rise Time :

65ns

Fall Time (Typ) :

38 ns

Number of Elements :

1

Width :

4.7mm

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

6A

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

24A

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Power Dissipation :

73W

Height :

9.4mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)