FQP6P25

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Mfr.Part #
FQP6P25
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 250V 6A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
24A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
Not Applicable
Series :
QFET®
FET Type :
P-Channel
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
780pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
6A
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain to Source Voltage (Vdss) :
250V
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Power Dissipation-Max :
90W Tc
Mounting Type :
Through Hole
Number of Elements :
1
JEDEC-95 Code :
TO-220AB
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
COMMERCIAL
Number of Terminations :
3
Package / Case :
TO-220-3
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
6A Tc
Avalanche Energy Rating (Eas) :
540 mJ
Packaging :
Tube
Reach Compliance Code :
Unknown
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
250V
Terminal Finish :
MATTE TIN
JESD-30 Code :
R-PSFM-T3
Datasheets
FQP6P25
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP6P25 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, FQP6P25 pinout, FQP6P25 datasheet PDF, FQP6P25 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQP6P25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQP6P25


P-Channel Tube 1.1 Ω @ 3A, 10V ±30V 780pF @ 25V 27nC @ 10V 250V TO-220-3

FQP6P25 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 540 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 780pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 24A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 250V in order to maintain normal operation.Operating this transistor requires a 250V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

FQP6P25 Features


the avalanche energy rating (Eas) is 540 mJ
based on its rated peak drain current 24A.
a 250V drain to source voltage (Vdss)


FQP6P25 Applications


There are a lot of Rochester Electronics, LLC
FQP6P25 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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