FQP6N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

900V

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

24A

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Turn On Delay Time :

35 ns

Turn-Off Delay Time :

55 ns

Resistance :

2.3Ohm

Current Rating :

6A

Number of Terminations :

3

Factory Lead Time :

5 Weeks

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

900V

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Width :

4.7mm

Height :

9.4mm

Published :

2003

Fall Time (Typ) :

60 ns

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Termination :

Through Hole

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

650 mJ

Element Configuration :

Single

Series :

QFET®

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Packaging :

Tube

Weight :

1.8g

Nominal Vgs :

5 V

Length :

10.1mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

167W

Vgs (Max) :

±30V

Power Dissipation-Max :

167W Tc

Number of Pins :

3

Threshold Voltage :

5V

Pbfree Code :

yes

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

6A

Lead Free :

Lead Free

Rise Time :

90ns

Dual Supply Voltage :

900V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

6A Tc

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

6A

Mount :

Through Hole

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 3A, 10V