FQP6N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

650 mJ

Operating Mode :

ENHANCEMENT MODE

Current Rating :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

5V

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Power Dissipation :

167W

ECCN Code :

EAR99

Lead Free :

Lead Free

Package / Case :

TO-220-3

Resistance :

2.3Ohm

Turn-Off Delay Time :

55 ns

Pulsed Drain Current-Max (IDM) :

24A

Number of Pins :

3

Length :

10.1mm

Voltage - Rated DC :

900V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

900V

Turn On Delay Time :

35 ns

Factory Lead Time :

5 Weeks

Width :

4.7mm

Drain Current-Max (Abs) (ID) :

6A

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Continuous Drain Current (ID) :

6A

Rise Time :

90ns

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Element Configuration :

Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Dual Supply Voltage :

900V

Transistor Application :

SWITCHING

Published :

2003

Nominal Vgs :

5 V

Weight :

1.8g

Fall Time (Typ) :

60 ns

Series :

QFET®

Termination :

Through Hole

Height :

9.4mm

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

167W Tc

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Packaging :

Tube

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ