FQP6N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

FET Type :

N-Channel

Drain-source On Resistance-Max :

2.3Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Number of Terminations :

3

Surface Mount :

No

Terminal Position :

Single

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

900V

JESD-609 Code :

e3

Number of Elements :

1

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

6A

Transistor Application :

SWITCHING

Pbfree Code :

yes

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 2.9A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

24A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

167W Tc

Drain to Source Voltage (Vdss) :

900V

Vgs(th) (Max) @ Id :

5V @ 250μA

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

HTS Code :

8541.29.00.95

Packaging :

Tube

Avalanche Energy Rating (Eas) :

650 mJ

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1880pF @ 25V

Published :

2000