FQP6N80C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Published :

2003

DS Breakdown Voltage-Min :

800V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Pbfree Code :

yes

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

JESD-609 Code :

e3

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

800V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.75A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 25V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Power Dissipation-Max :

158W Tc

Drain Current-Max (Abs) (ID) :

5.5A

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Surface Mount :

No

FET Type :

N-Channel

HTS Code :

8541.29.00.95

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

680 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

7 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

22A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED