FQP6N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

22A

Series :

QFET®

Power Dissipation-Max :

158W Tc

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1310pF @ 25V

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

5V @ 250μA

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

680 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.75A, 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

HTS Code :

8541.29.00.95

Transistor Application :

SWITCHING

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

800V

Drain Current-Max (Abs) (ID) :

5.5A

Package / Case :

TO-220-3

Packaging :

Tube

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

800V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Factory Lead Time :

7 Weeks

Number of Terminations :

3

Vgs (Max) :

±30V