FQP6N70

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Current Rating :

6.2A

Avalanche Energy Rating (Eas) :

600 mJ

Power Dissipation :

142W

Weight :

1.8g

Power Dissipation-Max :

142W Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

700V

Element Configuration :

Single

Turn On Delay Time :

25 ns

Number of Elements :

1

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Number of Pins :

3

Package / Case :

TO-220-3

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Transistor Element Material :

SILICON

Number of Terminations :

3

Fall Time (Typ) :

50 ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

24.8A

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.1A, 10V

Continuous Drain Current (ID) :

6.2A

Operating Temperature :

-55°C~150°C TJ

Rise Time :

70ns

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Turn-Off Delay Time :

55 ns

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Series :

QFET®

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

700V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3