FQP6N70

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.8g

Current Rating :

6.2A

Turn-Off Delay Time :

55 ns

Continuous Drain Current (ID) :

6.2A

Vgs (Max) :

±30V

Power Dissipation-Max :

142W Tc

Pbfree Code :

yes

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

Series :

QFET®

Mounting Type :

Through Hole

Voltage - Rated DC :

700V

Pulsed Drain Current-Max (IDM) :

24.8A

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

JEDEC-95 Code :

TO-220AB

Power Dissipation :

142W

Number of Pins :

3

Turn On Delay Time :

25 ns

Drain to Source Breakdown Voltage :

700V

Transistor Application :

SWITCHING

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.1A, 10V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Radiation Hardening :

No

Fall Time (Typ) :

50 ns

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Rise Time :

70ns

Element Configuration :

Single

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

600 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE