FQI2P25TU

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Mfr.Part #
FQI2P25TU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET P-CH 250V 2.3A I2PAK
Stock
1,000
In Stock :
1,000

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
QFET®
JESD-30 Code :
R-PSIP-T3
Pulsed Drain Current-Max (IDM) :
9.2A
Pin Count :
3
Reach Compliance Code :
Unknown
Rds On (Max) @ Id, Vgs :
4 Ω @ 1.15A, 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Pbfree Code :
yes
Mounting Type :
Through Hole
Surface Mount :
No
Vgs (Max) :
±30V
Terminal Finish :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
250V
Number of Terminations :
3
Qualification Status :
COMMERCIAL
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Current - Continuous Drain (Id) @ 25°C :
2.3A Tc
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
250V
Avalanche Energy Rating (Eas) :
120 mJ
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 10V
Drain Current-Max (Abs) (ID) :
2.3A
Drain-source On Resistance-Max :
4Ohm
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
3.13W Ta 52W Tc
Terminal Position :
Single
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
FQI2P25TU
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQI2P25TU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, FQI2P25TU pinout, FQI2P25TU datasheet PDF, FQI2P25TU amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQI2P25TU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQI2P25TU


P-Channel Tube 4 Ω @ 1.15A, 10V ±30V 250pF @ 25V 8.5nC @ 10V 250V TO-262-3 Long Leads, I2Pak, TO-262AA

FQI2P25TU Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.The maximum input capacitance of this device is 250pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 2.3A.There is no pulsed drain current maximum for this device based on its rated peak drain current 9.2A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

FQI2P25TU Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 9.2A.
a 250V drain to source voltage (Vdss)


FQI2P25TU Applications


There are a lot of Rochester Electronics, LLC
FQI2P25TU applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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