FQI2P25TU
- Mfr.Part #
- FQI2P25TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET P-CH 250V 2.3A I2PAK
- Stock
- 1,000
- In Stock :
- 1,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- QFET®
- JESD-30 Code :
- R-PSIP-T3
- Pulsed Drain Current-Max (IDM) :
- 9.2A
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 4 Ω @ 1.15A, 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Vgs (Max) :
- ±30V
- Terminal Finish :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 250V
- Number of Terminations :
- 3
- Qualification Status :
- COMMERCIAL
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 250V
- Avalanche Energy Rating (Eas) :
- 120 mJ
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 8.5nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 2.3A
- Drain-source On Resistance-Max :
- 4Ohm
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 3.13W Ta 52W Tc
- Terminal Position :
- Single
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- FQI2P25TU

P-Channel Tube 4 Ω @ 1.15A, 10V ±30V 250pF @ 25V 8.5nC @ 10V 250V TO-262-3 Long Leads, I2Pak, TO-262AA
FQI2P25TU Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.The maximum input capacitance of this device is 250pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 2.3A.There is no pulsed drain current maximum for this device based on its rated peak drain current 9.2A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FQI2P25TU Features
the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 9.2A.
a 250V drain to source voltage (Vdss)
FQI2P25TU Applications
There are a lot of Rochester Electronics, LLC
FQI2P25TU applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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