FQI2N90TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

900V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Series :

QFET®

Pulsed Drain Current-Max (IDM) :

8.8A

Avalanche Energy Rating (Eas) :

170 mJ

Power Dissipation-Max :

3.13W Ta 85W Tc

Rds On (Max) @ Id, Vgs :

7.2 Ω @ 1.1A, 10V

Packaging :

Tube

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

2.2A

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Terminal Position :

Single

Pbfree Code :

yes

JESD-30 Code :

R-PSIP-T3

Qualification Status :

COMMERCIAL

Terminal Finish :

NOT SPECIFIED

DS Breakdown Voltage-Min :

900V

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Pin Count :

3

Surface Mount :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA