FQI2P25TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Series :

QFET®

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

2.3A

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

120 mJ

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

250V

Rds On (Max) @ Id, Vgs :

4 Ω @ 1.15A, 10V

Drain-source On Resistance-Max :

4Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

9.2A

Terminal Finish :

NOT SPECIFIED

Power Dissipation-Max :

3.13W Ta 52W Tc

Number of Elements :

1

Terminal Position :

Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Surface Mount :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE