FQI2N80TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

9.6A

DS Breakdown Voltage-Min :

800V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

800V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

180 mJ

Packaging :

Tube

FET Type :

N-Channel

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Number of Terminations :

3

JESD-609 Code :

e3

Pin Count :

3

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

2.4A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs (Max) :

±30V

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

3.13W Ta 85W Tc

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 900mA, 10V