FQI2N30TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

100 mJ

Surface Mount :

No

DS Breakdown Voltage-Min :

300V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

8.4A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2.1A Tc

Number of Terminations :

3

Power Dissipation-Max :

3.13W Ta 40W Tc

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

2.1A

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSIP-T3

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Rds On (Max) @ Id, Vgs :

3.7 Ω @ 1.05A, 10V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Position :

Single

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 25V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

300V

Peak Reflow Temperature (Cel) :

Not Applicable

Number of Elements :

1