FQI2N30TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Drain to Source Voltage (Vdss) :

300V

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

3.13W Ta 40W Tc

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

100 mJ

Current - Continuous Drain (Id) @ 25°C :

2.1A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

8.4A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs (Max) :

±30V

Pin Count :

3

JESD-30 Code :

R-PSIP-T3

Transistor Application :

SWITCHING

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

2.1A

Qualification Status :

COMMERCIAL

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

3.7 Ω @ 1.05A, 10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Reach Compliance Code :

Unknown

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 25V

Terminal Finish :

MATTE TIN

Number of Elements :

1

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

300V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Series :

QFET®