FQI2N80TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

800V

Transistor Application :

SWITCHING

Series :

QFET®

JESD-30 Code :

R-PSIP-T3

Number of Terminations :

3

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 900mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

9.6A

FET Type :

N-Channel

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

2.4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

180 mJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Pin Count :

3

Mounting Type :

Through Hole

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Pbfree Code :

yes

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

Not Applicable

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Transistor Element Material :

SILICON

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

800V

Power Dissipation-Max :

3.13W Ta 85W Tc

Reach Compliance Code :

Unknown