FQI2NA90TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Published :

2000

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs (Max) :

±30V

Supplier Device Package :

I2PAK (TO-262)

Power Dissipation-Max :

3.13W Ta 107W Tc

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Drain to Source Voltage (Vdss) :

900V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

5.8Ohm @ 1.4A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®