FQI27N25TU
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- Mfr.Part #
- FQI27N25TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 25.5A I2PAK
- Stock
- 982
- In Stock ：
- 982
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 12.75A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2450pF @ 25V
- Lead Free :
- Lead Free
- Rise Time :
- 270ns
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Power Dissipation-Max :
- 3.13W Ta 180W Tc
- Turn On Delay Time :
- 32 ns
- Factory Lead Time :
- 4 Weeks
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 80 ns
- Continuous Drain Current (ID) :
- 25.5A
- Voltage - Rated DC :
- 250V
- Current - Continuous Drain (Id) @ 25°C :
- 25.5A Tc
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Number of Terminations :
- 3
- Current Rating :
- 25.5A
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 250V
- Series :
- QFET®
- Power Dissipation :
- 3.13W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 2.084g
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Fall Time (Typ) :
- 120 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Resistance :
- 110mOhm
- Element Configuration :
- Single
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- JESD-30 Code :
- R-PSIP-T3
- Datasheets
- FQI27N25TU
N-Channel Tube 110m Ω @ 12.75A, 10V ±30V 2450pF @ 25V 65nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
FQI27N25TU Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 600 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2450pF @ 25V.This device conducts a continuous drain current (ID) of 25.5A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 80 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 32 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQI27N25TU Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 25.5A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 80 ns
FQI27N25TU Applications
There are a lot of ON Semiconductor
FQI27N25TU applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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