FQD3P50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Channels :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

4.9 Ω @ 1.05A, 10V

Rise Time :

56ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.1A Tc

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

8 Weeks

Drain to Source Voltage (Vdss) :

500V

Vgs (Max) :

±30V

Height :

2.517mm

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Threshold Voltage :

-5V

Pbfree Code :

yes

Terminal Form :

Gull wing

Published :

2000

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Number of Pins :

3

Power Dissipation :

2.5W

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-500V

Avalanche Energy Rating (Eas) :

250 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

2.5W Ta 50W Tc

Voltage - Rated DC :

-500V

Current :

18A

Turn On Delay Time :

12 ns

Resistance :

4.9Ohm

Turn-Off Delay Time :

35 ns

Packaging :

Tape and Reel (TR)

Series :

QFET®

JESD-609 Code :

e3

Fall Time (Typ) :

45 ns

Current Rating :

-2.1A

Width :

6.22mm

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

-2.1A

Operating Temperature :

-55°C~150°C TJ

Voltage :

400V

Max Junction Temperature (Tj) :

150°C

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Radiation Hardening :

No

Length :

6.73mm

FET Type :

P-Channel

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC