FQD3N40TF
- Mfr.Part #
- FQD3N40TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 2A DPAK
- Stock
- 1
- In Stock :
- 1
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 400V
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- COMMERCIAL
- Power Dissipation-Max :
- 2.5W Ta 30W Tc
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 8A
- Pin Count :
- 3
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Drain to Source Voltage (Vdss) :
- 400V
- Avalanche Energy Rating (Eas) :
- 120 mJ
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 2A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Elements :
- 1
- Terminal Finish :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- QFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 3.4 Ω @ 1A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FQD3N40TF

N-Channel Tape & Reel (TR) 3.4 Ω @ 1A, 10V ±30V 230pF @ 25V 7.5nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD3N40TF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 230pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 2A.Pulsed drain current is maximum rated peak drain current 8A.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQD3N40TF Features
the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 8A.
a 400V drain to source voltage (Vdss)
FQD3N40TF Applications
There are a lot of Rochester Electronics, LLC
FQD3N40TF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FQD30N06LTF | onsemi | 20,591 | MOSFET N-CH 60V 24A DPAK |
| FQD30N06LTM | onsemi | 3,050 | MOSFET N-CH 60V 24A DPAK |
| FQD30N06TF | onsemi | 2,919 | MOSFET N-CH 60V 22.7A DPAK |
| FQD30N06TF | onsemi | 7,456 | MOSFET N-CH 60V 22.7A DPAK |
| FQD30N06TF_F080 | onsemi | 47,135 | MOSFET N-CH 60V 22.7A DPAK |
| FQD30N06TM | onsemi | 120,663 | MOSFET N-CH 60V 22.7A TO252 |
| FQD30N06TM | onsemi | 120,663 | POWER MOSFET, N-CHANNEL, QFET, 6 |
| FQD3N30TF | onsemi | 1 | MOSFET N-CH 300V 2.4A DPAK |
| FQD3N30TF | onsemi | 1 | MOSFET N-CH 300V 2.4A DPAK |
| FQD3N30TM | onsemi | 27,352 | MOSFET N-CH 300V 2.4A DPAK |
| FQD3N40TF | onsemi | 1 | MOSFET N-CH 400V 2A DPAK |
| FQD3N40TM | onsemi | 1,367 | MOSFET N-CH 400V 2A DPAK |
| FQD3N40TM | onsemi | 20,783 | MOSFET N-CH 400V 2A DPAK |
| FQD3N50CTF | onsemi | 1,448 | MOSFET N-CH 500V 2.5A DPAK |
| FQD3N50CTF | onsemi | 39,662 | MOSFET N-CH 500V 2.5A DPAK |
















