FQD3N40TF

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Mfr.Part #
FQD3N40TF
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 400V 2A DPAK
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Qualification Status :
COMMERCIAL
Surface Mount :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
120 mJ
Series :
QFET®
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSSO-G2
Pulsed Drain Current-Max (IDM) :
8A
Terminal Form :
Gull wing
Reach Compliance Code :
Unknown
Transistor Application :
SWITCHING
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
230pF @ 25V
Number of Elements :
1
Terminal Finish :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Pin Count :
3
FET Type :
N-Channel
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
5V @ 250μA
Mounting Type :
Surface Mount
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
3.4 Ω @ 1A, 10V
Transistor Element Material :
SILICON
Drain Current-Max (Abs) (ID) :
2A
Vgs (Max) :
±30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
2.5W Ta 30W Tc
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
400V
Number of Terminations :
2
Configuration :
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min :
400V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
FQD3N40TF
Introducing Transistors - FETs, MOSFETs - Single onsemi FQD3N40TF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, FQD3N40TF pinout, FQD3N40TF datasheet PDF, FQD3N40TF amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQD3N40TF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQD3N40TF


N-Channel Tape & Reel (TR) 3.4 Ω @ 1A, 10V ±30V 230pF @ 25V 7.5nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD3N40TF Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 230pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 2A.Pulsed drain current is maximum rated peak drain current 8A.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQD3N40TF Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 8A.
a 400V drain to source voltage (Vdss)


FQD3N40TF Applications


There are a lot of Rochester Electronics, LLC
FQD3N40TF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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