FQD30N06TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

60V

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

945pF @ 25V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

280 mJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

22.7A Tc

DS Breakdown Voltage-Min :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

QFET®

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

45m Ω @ 11.4A, 10V

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

22.7A

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.045Ohm

Pulsed Drain Current-Max (IDM) :

90.8A

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta 44W Tc

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63