FQD3N30TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

DRAIN

Reach Compliance Code :

Unknown

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

300V

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta 30W Tc

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

300V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.2A, 10V

Terminal Form :

Gull wing

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

2.4A

Terminal Finish :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Position :

Single

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

9.6A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

140 mJ