FQD30N06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

280 mJ

Qualification Status :

Not Qualified

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.5W

Power Dissipation-Max :

2.5W Ta 44W Tc

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Weight :

260.37mg

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

45m Ω @ 11.4A, 10V

Number of Terminations :

2

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

945pF @ 25V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.045Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±25V

Series :

QFET®

Pulsed Drain Current-Max (IDM) :

90.8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Factory Lead Time :

11 Weeks

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

22.7A Tc

Pbfree Code :

yes

DS Breakdown Voltage-Min :

60V

Continuous Drain Current (ID) :

22.7A

Gate to Source Voltage (Vgs) :

25V

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V