FQD3N30TF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

DS Breakdown Voltage-Min :

300V

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.2A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

140 mJ

Power Dissipation-Max :

2.5W Ta 30W Tc

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Drain Current-Max (Abs) (ID) :

2.4A

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

300V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

NOT SPECIFIED

Pbfree Code :

yes

FET Type :

N-Channel

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

9.6A

Number of Elements :

1