FQD30N06TF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

280 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

945pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

60V

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

22.7A Tc

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

60V

Pbfree Code :

yes

Pin Count :

3

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

90.8A

FET Type :

N-Channel

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta 44W Tc

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

22.7A

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

45m Ω @ 11.4A, 10V

Drain-source On Resistance-Max :

0.045Ohm