FQD30N06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta 44W Tc

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Drain to Source Voltage (Vdss) :

60V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

2.5W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Weight :

260.37mg

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Number of Elements :

1

Continuous Drain Current (ID) :

22.7A

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

45m Ω @ 11.4A, 10V

Mount :

Surface Mount

Element Configuration :

Single

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

90.8A

Avalanche Energy Rating (Eas) :

280 mJ

Drain-source On Resistance-Max :

0.045Ohm

Input Capacitance (Ciss) (Max) @ Vds :

945pF @ 25V

Factory Lead Time :

11 Weeks

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

22.7A Tc

DS Breakdown Voltage-Min :

60V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V