FQD3N60CTM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Terminations :

2

Power Dissipation :

50W

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 25V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

9.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

30ns

DS Breakdown Voltage-Min :

600V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Factory Lead Time :

11 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Continuous Drain Current (ID) :

2.4A

Pbfree Code :

yes

Lead Free :

Lead Free

Power Dissipation-Max :

50W Tc

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1.2A, 10V

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Terminal Form :

Gull wing

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

600V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

35 ns

Fall Time (Typ) :

35 ns

Transistor Application :

SWITCHING

Element Configuration :

Single

Weight :

260.37mg

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Radiation Hardening :

No