FQD3N60CTM
- Mfr.Part #
- FQD3N60CTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 38,509
- In Stock :
- 38,509
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- QFET®
- Factory Lead Time :
- 11 Weeks
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 30ns
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 565pF @ 25V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Weight :
- 260.37mg
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 9.6A
- Rds On (Max) @ Id, Vgs :
- 3.4 Ω @ 1.2A, 10V
- Turn On Delay Time :
- 12 ns
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 50W
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 35 ns
- Power Dissipation-Max :
- 50W Tc
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 35 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 2.4A
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 600V
- JEDEC-95 Code :
- TO-252AA
- DS Breakdown Voltage-Min :
- 600V
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Tc
- Lead Free :
- Lead Free
- Datasheets
- FQD3N60CTM

N-Channel Tape & Reel (TR) 3.4 Ω @ 1.2A, 10V ±30V 565pF @ 25V 14nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD3N60CTM-WS Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 565pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.4A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 35 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 9.6A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQD3N60CTM-WS Features
a continuous drain current (ID) of 2.4A
the turn-off delay time is 35 ns
based on its rated peak drain current 9.6A.
a 600V drain to source voltage (Vdss)
FQD3N60CTM-WS Applications
There are a lot of ON Semiconductor
FQD3N60CTM-WS applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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