FQB8P10TM
- Mfr.Part #
- FQB8P10TM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 8
- Stock
- 2,698
- In Stock :
- 2,698
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 470pF @ 25V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 530m Ω @ 4A, 10V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 3.75W Ta 65W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Current Rating :
- -8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Turn-Off Delay Time :
- 20 ns
- FET Type :
- P-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Resistance :
- 530mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Rise Time :
- 110ns
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Power Dissipation :
- 3.75W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 8A
- Drain to Source Breakdown Voltage :
- -100V
- Turn On Delay Time :
- 11 ns
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Voltage - Rated DC :
- -100V
- Series :
- QFET®
- Fall Time (Typ) :
- 35 ns
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 32A
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Weight :
- 1.31247g
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Datasheets
- FQB8P10TM
FQB8P10TM Documents

P-Channel Tape & Reel (TR) 530m Ω @ 4A, 10V ±30V 470pF @ 25V 15nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB8P10TM Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 470pF @ 25V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.Using VGS=-100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 8A.When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 32A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQB8P10TM Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 32A.
a 100V drain to source voltage (Vdss)
FQB8P10TM Applications
There are a lot of ON Semiconductor
FQB8P10TM applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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