FQB8N90CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.15A, 10V

Element Configuration :

Single

Rise Time :

110ns

Turn On Delay Time :

40 ns

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

6.3A

Vgs (Max) :

±30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Turn-Off Delay Time :

70 ns

Mount :

Surface Mount

Weight :

1.31247g

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

70 ns

Number of Channels :

1

Number of Elements :

1

Drain to Source Breakdown Voltage :

900V

Input Capacitance (Ciss) (Max) @ Vds :

2080pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Pbfree Code :

yes

Series :

QFET®

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

11 Weeks

Width :

9.65mm

Number of Terminations :

2

Power Dissipation-Max :

171W Tc

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

25A

Height :

4.83mm

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

850 mJ

Length :

10.67mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON