FQB8N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Turn-Off Delay Time :

81 ns

Series :

QFET®

Current Rating :

8A

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Height :

4.83mm

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Fall Time (Typ) :

64.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

60.5ns

Continuous Drain Current (ID) :

7.5A

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

600V

Published :

2003

Power Dissipation-Max :

3.13W Ta 147W Tc

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mount :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Voltage - Rated DC :

600V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 25V

Packaging :

Tape and Reel (TR)

Weight :

1.31247g

Power Dissipation :

3.13W

Case Connection :

DRAIN

Turn On Delay Time :

16.5 ns

Contact Plating :

Tin

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Number of Elements :

1