FQB8N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

8A

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

120 mJ

Rds On (Max) @ Id, Vgs :

550m Ω @ 4A, 10V

Drain-source On Resistance-Max :

0.55Ohm

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

250V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

3.13W Ta 87W Tc

Reach Compliance Code :

Unknown

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

FET Type :

N-Channel

Terminal Form :

Gull wing

Number of Elements :

1

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Vgs (Max) :

±30V

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

32A

Drain to Source Voltage (Vdss) :

250V

Transistor Element Material :

SILICON