FQB8P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Resistance :

530mOhm

FET Type :

P-Channel

Power Dissipation-Max :

3.75W Ta 65W Tc

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Turn-Off Delay Time :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Turn On Delay Time :

11 ns

Rise Time :

110ns

Rds On (Max) @ Id, Vgs :

530m Ω @ 4A, 10V

Current Rating :

-8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Power Dissipation :

3.75W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

-100V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Mount :

Surface Mount

Number of Terminations :

2

Pbfree Code :

yes

Continuous Drain Current (ID) :

8A

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Terminal Form :

Gull wing

Fall Time (Typ) :

35 ns

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-100V

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

8A

Drain to Source Voltage (Vdss) :

100V

Pulsed Drain Current-Max (IDM) :

32A

Weight :

1.31247g

ECCN Code :

EAR99

Element Configuration :

Single