FQB8N60CFTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Additional Feature :

AVALANCHE RATED

Surface Mount :

yes

Series :

FRFET®

Avalanche Energy Rating (Eas) :

160 mJ

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1.255pF @ 25V

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.13A, 10V

Drain Current-Max (Abs) (ID) :

6.26A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

6.26A Tc

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

25A

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Power Dissipation-Max :

147W Tc

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Elements :

1

Reach Compliance Code :

Unknown