FQB8N60CFTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Pin Count :

3

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Qualification Status :

COMMERCIAL

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Series :

FRFET®

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

160 mJ

Power Dissipation-Max :

147W Tc

Drain Current-Max (Abs) (ID) :

6.26A

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Case Connection :

DRAIN

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

25A

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.13A, 10V

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1.255pF @ 25V

DS Breakdown Voltage-Min :

600V

Current - Continuous Drain (Id) @ 25°C :

6.26A Tc