FQB8N90CTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Transistor Application :

SWITCHING

Length :

10.67mm

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Width :

9.65mm

Element Configuration :

Single

Power Dissipation-Max :

171W Tc

Avalanche Energy Rating (Eas) :

850 mJ

Drain to Source Breakdown Voltage :

900V

Height :

4.83mm

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2080pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Factory Lead Time :

11 Weeks

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

25A

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Turn-Off Delay Time :

70 ns

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Terminal Form :

Gull wing

Rise Time :

110ns

Turn On Delay Time :

40 ns

Number of Channels :

1

Pbfree Code :

yes

Series :

QFET®

Fall Time (Typ) :

70 ns

Number of Elements :

1

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

6.3A

Weight :

1.31247g

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.15A, 10V

ECCN Code :

EAR99