FQB7P20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Continuous Drain Current (ID) :

7.3A

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-200V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

29.2A

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Rise Time :

110ns

Pbfree Code :

yes

Width :

9.65mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2000

Operating Temperature :

-55°C~150°C TJ

Length :

10.67mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

-7.3A

Number of Elements :

1

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

200V

Fall Time (Typ) :

42 ns

Turn-Off Delay Time :

30 ns

Rds On (Max) @ Id, Vgs :

690m Ω @ 3.65A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

570 mJ

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

1.31247g

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

15 ns

Power Dissipation :

3.13W

Number of Terminations :

2

Height :

4.83mm

Resistance :

690mOhm

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 25V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Voltage - Rated DC :

-200V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

3.13W Ta 90W Tc

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V