FQB7N30TM
- Mfr.Part #
- FQB7N30TM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 7A D2PAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 300V
- Vgs (Max) :
- ±30V
- Series :
- QFET®
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Qualification Status :
- COMMERCIAL
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Finish :
- MATTE TIN
- Pbfree Code :
- yes
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 610pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 7A
- Number of Terminations :
- 2
- Reach Compliance Code :
- Unknown
- Pulsed Drain Current-Max (IDM) :
- 28A
- Drain-source On Resistance-Max :
- 0.7Ohm
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 3.13W Ta 85W Tc
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 700m Ω @ 3.5A, 10V
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 380 mJ
- DS Breakdown Voltage-Min :
- 300V
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Datasheets
- FQB7N30TM
FQB7N30TM Documents

N-Channel Tape & Reel (TR) 700m Ω @ 3.5A, 10V ±30V 610pF @ 25V 17nC @ 10V 300V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB7N30TM Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 380 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 610pF @ 25V.7A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 28A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
FQB7N30TM Features
the avalanche energy rating (Eas) is 380 mJ
based on its rated peak drain current 28A.
a 300V drain to source voltage (Vdss)
FQB7N30TM Applications
There are a lot of Rochester Electronics, LLC
FQB7N30TM applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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