FQB70N08TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

70A

Surface Mount :

yes

Pin Count :

3

Terminal Position :

Single

Terminal Form :

Gull wing

Power Dissipation-Max :

3.75W Ta 155W Tc

JESD-609 Code :

e3

Reach Compliance Code :

Unknown

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

17m Ω @ 35A, 10V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2.7pF @ 25V

Drain to Source Voltage (Vdss) :

80V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

1150 mJ

DS Breakdown Voltage-Min :

80V

Vgs (Max) :

±25V

Pulsed Drain Current-Max (IDM) :

280A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Pbfree Code :

yes

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.017Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA