FQB7N10LTM
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- Mfr.Part #
- FQB7N10LTM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7.3A D2PAK
- Stock
- 19,270
- In Stock ：
- 19,270
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 350mOhm @ 3.65A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 290pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A Tc
- Power Dissipation-Max :
- 3.75W Ta 40W Tc
- Series :
- QFET®
- Drain to Source Voltage (Vdss) :
- 100V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- D2PAK (TO-263AB)
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 5V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- FQB7N10LTM
N-Channel Tape & Reel (TR) 350mOhm @ 3.65A, 10V ±20V 290pF @ 25V 6nC @ 5V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB7N10LTM Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 290pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
FQB7N10LTM Features
a 100V drain to source voltage (Vdss)
FQB7N10LTM Applications
There are a lot of ON Semiconductor
FQB7N10LTM applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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