FQB7N60TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Power Dissipation-Max :

3.13W Ta 142W Tc

Terminal Finish :

Tin (Sn)

Resistance :

1Ohm

Turn On Delay Time :

30 ns

Weight :

1.31247g

Fall Time (Typ) :

60 ns

Gate to Source Voltage (Vgs) :

30V

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Series :

QFET®

Height :

4.83mm

Voltage - Rated DC :

600V

Width :

9.65mm

ECCN Code :

EAR99

Length :

10.67mm

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.7A, 10V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

600V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 25V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

580 mJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

65 ns

Rise Time :

80ns

Case Connection :

DRAIN

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

3.13W

Pulsed Drain Current-Max (IDM) :

29.6A

Number of Elements :

1

JESD-609 Code :

e3

Pbfree Code :

yes

Vgs (Max) :

±30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

7.4A

Current Rating :

7.4A

Mounting Type :

Surface Mount

Radiation Hardening :

No