FQB7N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Transistor Element Material :

SILICON

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

FET Type :

N-Channel

Terminal Form :

Gull wing

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3.13W Ta 85W Tc

Series :

QFET®

Pin Count :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Drain Current-Max (Abs) (ID) :

7A

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

700m Ω @ 3.5A, 10V

Drain-source On Resistance-Max :

0.7Ohm

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

300V

Vgs(th) (Max) @ Id :

5V @ 250μA

DS Breakdown Voltage-Min :

300V

Pulsed Drain Current-Max (IDM) :

28A

Avalanche Energy Rating (Eas) :

380 mJ

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Packaging :

Tape and Reel (TR)