FQB7N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Mounting Type :

Surface Mount

FET Type :

N-Channel

JESD-609 Code :

e3

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

700m Ω @ 3.5A, 10V

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Transistor Application :

SWITCHING

Pin Count :

3

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

7A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.7Ohm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Series :

QFET®

Power Dissipation-Max :

3.13W Ta 85W Tc

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

28A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

380 mJ

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

300V

Number of Elements :

1

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

300V

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260