FQB7N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Transistor Element Material :

SILICON

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Terminal Position :

Single

Case Connection :

DRAIN

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.35Ohm

Pin Count :

3

Series :

QFET®

JESD-609 Code :

e3

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

50 mJ

Rds On (Max) @ Id, Vgs :

350m Ω @ 3.65A, 10V

Drain Current-Max (Abs) (ID) :

7.3A

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

29.2A

DS Breakdown Voltage-Min :

100V

Power Dissipation-Max :

3.75W Ta 40W Tc